SQ2303ES-T1_GE3
SQ2303ES-T1_GE3
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产品描述:
MOSFET P-CHAN 30V SOT23
标准包装:1
数据手册: --
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Packaging: Reel
Qg - Gate Charge: 4.5 nC
Pd - Power Dissipation: 600 mW
Tradename: TrenchFET
Vgs th - Gate-Source Threshold Voltage: - 1.5 V
Vgs - Gate-Source Voltage: +/- 20 V
Mounting Style: SMD/SMT
Fall Time: 8 ns
Forward Transconductance - Min: 4 S
Series: SQ
Factory Pack Quantity: 3000
Brand: Vishay / Siliconix
RoHS:  Details
Id - Continuous Drain Current: - 2.5 A
Rise Time: 8 ns
Rds On - Drain-Source Resistance: 370 mOhms
Minimum Operating Temperature: - 55 C
Technology: Si
Package / Case: SOT-23-3
Configuration: Single
Unit Weight: 0.050717 oz
Number of Channels: 1 Channel
Typical Turn-On Delay Time: 5 ns
Manufacturer: Vishay
Transistor Polarity: P-Channel
Channel Mode: Enhancement
Typical Turn-Off Delay Time: 12 ns
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: - 30 V
Maximum Operating Temperature: + 175 C
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Supplier Stock

Offline Manufacture or Manufacture authorized supplier owned stock and price , need double confirmation and share out from them

stock2890Update On
2025-07-18
Lead-Time4 weeks
SPQ/MOQ1/1
Location--
DateCodewithin 2 yrs

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