| SQ2303ES-T1_GE3 | ||
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| 产品描述：
MOSFET P-CHAN 30V SOT23
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| 标准包装：1 | ||
| 数据手册： -- |
- 规格参数
- 产品特性
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| Packaging: | Reel |
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| Qg - Gate Charge: | 4.5 nC |
| Pd - Power Dissipation: | 600 mW |
| Tradename: | TrenchFET |
| Vgs th - Gate-Source Threshold Voltage: | - 1.5 V |
| Vgs - Gate-Source Voltage: | +/- 20 V |
| Mounting Style: | SMD/SMT |
| Fall Time: | 8 ns |
| Forward Transconductance - Min: | 4 S |
| Series: | SQ |
| Factory Pack Quantity: | 3000 |
| Brand: | Vishay / Siliconix |
| RoHS: | Details |
| Id - Continuous Drain Current: | - 2.5 A |
| Rise Time: | 8 ns |
| Rds On - Drain-Source Resistance: | 370 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Package / Case: | SOT-23-3 |
| Configuration: | Single |
| Unit Weight: | 0.050717 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 5 ns |
| Manufacturer: | Vishay |
| Transistor Polarity: | P-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 12 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | - 30 V |
| Maximum Operating Temperature: | + 175 C |
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