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| Product description : Hong Kong | ||
| SPQ：1 | ||
| Datasheet : -- |
- Specifications
- Product Attributes
- Documents
- Product reviews
| FET Feature | Logic Level Gate |
|---|---|
| Package / Case | DirectFET™ Isometric ME |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 209A (Tc) |
| Part Status | Active |
| Manufacturer | Infineon Technologies |
| Series | HEXFET®, StrongIRFET™ |
| Vgs(th) (Max) @ Id | 2.5V @ 150µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Packaging | Digi-Reel® |
| Rds On (Max) @ Id, Vgs | 1.25 mOhm @ 123A, 10V |
| Power - Max | 104W |
| Supplier Device Package | DirectFET™ Isometric ME |
| Gate Charge (Qg) @ Vgs | 111nC @ 4.5V |
| Category | Discrete Semiconductor Products |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | Transistors - FETs, MOSFETs - Single |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 6904pF @ 25V |
| ECCN | EAR99 |
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