STP170N8F7
  • 量产中
  • EAR99
产品描述:
N-Channel 80 V 0.0039 Ohm 120 nC 250 W Flange Mount Mosfet - TO-220
标准包装:1
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Product: Power MOSFET
Rds On - Drain-Source Resistance: 3.9 mOhms
Minimum Operating Temperature: - 55 C
Technology: Si
Vgs th - Gate-Source Threshold Voltage: 2.5 V to 4.5 V
Vgs - Gate-Source Voltage: +/- 20 V
Mounting Style: Through Hole
Fall Time: 37 ns
Length: 15.75 mm
Series: N-channel STripFET
Factory Pack Quantity: 50
Brand: STMicroelectronics
RoHS:  Details
Id - Continuous Drain Current: 120 A
Rise Time: 53 ns
Maximum Operating Temperature: + 175 C
Width: 10.4 mm
Qg - Gate Charge: 120 nC
Pd - Power Dissipation: 250 W
Package / Case: TO-220-3
Height: 4.6 mm
Unit Weight: 0.011640 oz
Number of Channels: 1 Channel
Typical Turn-On Delay Time: 38 ns
Manufacturer: STMicroelectronics
Transistor Polarity: N-Channel
Channel Mode: Enhancement
Typical Turn-Off Delay Time: 79 ns
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: 80 V
Type: STripFET F7
ECCN EAR99
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