
SPP06N80C3XKSA1

ACTIVE EAR99
Product description : Single N-Channel 800 V 900 mOhm 31 nC CoolMOS™ Power Mosfet - TO-220-3
SPQ：1
Datasheet : --

Width:	4.57 mm
Rds On - Drain-Source Resistance:	780 mOhms
Minimum Operating Temperature:	- 55 C
Technology:	Si
Package / Case:	TO-220-3
Height:	15.95 mm
Vgs - Gate-Source Voltage:	+/- 20 V
Mounting Style:	Through Hole
Fall Time:	8 ns
Length:	10.36 mm
Series:	XPP06N80
Factory Pack Quantity:	500
Brand:	Infineon Technologies
Typical Turn-Off Delay Time:	72 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	800 V
Transistor Type:	1 N-Channel
ECCN	EAR99
Packaging:	Tube
Qg - Gate Charge:	41 nC
Pd - Power Dissipation:	83 W
Tradename:	CoolMOS
Vgs th - Gate-Source Threshold Voltage:	2.1 V
Configuration:	1 N-Channel
Unit Weight:	0.211644 oz
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	25 ns
Manufacturer:	Infineon
Transistor Polarity:	N-Channel
Channel Mode:	Enhancement
Part # Aliases:	SP000683154 SPP06N80C3 SPP06N80C3XK
RoHS:	Details
Id - Continuous Drain Current:	6 A
Rise Time:	15 ns
Maximum Operating Temperature:	+ 150 C

Stock code :	4350939
Mfg name :	Infineon Technologies
MPN :	SPP06N80C3XKSA1
Product description :	Single N-Channel 800 V 900 mOhm 31 nC CoolMOS™ Power Mosfet - TO-220-3

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