IPD30N08S2L21ATMA1
IPD30N08S2L21ATMA1
  • ACTIVE
  • EAR99
Product description : Single N-Channel 75 V 20.5 mOhm 56 nC OptiMOS™ Power Mosfet - TO-252-3-11
SPQ:2500
Datasheet : --
  • Specifications
  • Product Attributes
  • Documents
  • Product reviews
Packaging: Reel
Qg - Gate Charge: 72 nC
Pd - Power Dissipation: 136 W
Package / Case: TO-252-3
Configuration: 1 N-Channel
Unit Weight: 0.139332 oz
Number of Channels: 1 Channel
Typical Turn-On Delay Time: 9 ns
Series: XPD30N08
Factory Pack Quantity: 2500
Brand: Infineon Technologies
Typical Turn-Off Delay Time: 44 ns
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: 75 V
Transistor Type: 1 N-Channel
ECCN EAR99
Rds On - Drain-Source Resistance: 15.9 mOhms
Minimum Operating Temperature: - 55 C
Technology: Si
Vgs th - Gate-Source Threshold Voltage: 1.2 V
Vgs - Gate-Source Voltage: +/- 20 V
Mounting Style: SMD/SMT
Fall Time: 11 ns
Manufacturer: Infineon
Transistor Polarity: N-Channel
Channel Mode: Enhancement
Part # Aliases: IPD30N08S2L-21 IPD30N08S2L21XT SP000252170
RoHS:  Details
Id - Continuous Drain Current: 30 A
Rise Time: 30 ns
Maximum Operating Temperature: + 175 C
You can comment after logging in.
库存信息2到货提醒

供应商库存

线下原厂及原厂授权代理商库存,接单后需要再次确认价格和数量

库存数量10000库存更新于
2025-07-08
订货周期--
SPQ/MOQ2500/2500
库存地--
生产批次2301

Please enter the verification code in the image below:

verification code