IPB180N04S302ATMA1
  • ACTIVE
  • PG-TO263-7-3
  • EAR99
Product description : Single N-Channel 40 V 1.5 mOhm 160 nC OptiMOS™ Power Mosfet - D2PAK-7
SPQ:1000
Datasheet : --
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FET Feature Standard
Package / Case TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Part Status Not For New Designs
Manufacturer Infineon Technologies
Series OptiMOS™
Vgs(th) (Max) @ Id 4V @ 230µA
Operating Temperature -55°C ~ 175°C (TJ)
Packaging Tape & Reel (TR)
Rds On (Max) @ Id, Vgs 1.5 mOhm @ 80A, 10V
Power - Max 300W
Supplier Device Package PG-TO263-7-3
Gate Charge (Qg) @ Vgs 210nC @ 10V
Category Discrete Semiconductor Products
FET Type MOSFET N-Channel, Metal Oxide
Family Transistors - FETs, MOSFETs - Single
Mounting Type Surface Mount
Input Capacitance (Ciss) @ Vds 14300pF @ 25V
ECCN EAR99
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