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| Product description : Single N-Channel 100 V 4.8 mOhm 135 nC OptiMOS™ Power Mosfet - D2PAK | ||
| SPQ：1000 | ||
| Datasheet : -- |
- Specifications
- Product Attributes
- Documents
- Product reviews
| FET Feature | Standard |
|---|---|
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Part Status | Not For New Designs |
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| Vgs(th) (Max) @ Id | 4V @ 240µA |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Packaging | Tape & Reel (TR) |
| Rds On (Max) @ Id, Vgs | 4.8 mOhm @ 100A, 10V |
| Power - Max | 300W |
| Supplier Device Package | PG-TO263-3-2 |
| Gate Charge (Qg) @ Vgs | 176nC @ 10V |
| Category | Discrete Semiconductor Products |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | Transistors - FETs, MOSFETs - Single |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 11570pF @ 25V |
| ECCN | EAR99 |
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