IPA60R190C6XKSA1
IPA60R190C6XKSA1
  • ACTIVE
  • EAR99
Product description : Single N-Channel 600 V 190 mOhm 63 nC CoolMOS™ Power Mosfet - TO-220-3FP
SPQ：1
Datasheet : --
ECAD Model:
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Width: 4.9 mm
Rds On - Drain-Source Resistance: 190 mOhms
Minimum Operating Temperature: - 55 C
Technology: Si
Package / Case: TO-220-3
Height: 16.15 mm
Vgs - Gate-Source Voltage: +/- 20 V
Mounting Style: Through Hole
Fall Time: 9 ns
Length: 10.65 mm
Series: XPA60R190
Factory Pack Quantity: 500
Brand: Infineon Technologies
Typical Turn-Off Delay Time: 110 ns
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: 650 V
Transistor Type: 1 N-Channel
ECCN EAR99
Packaging: Tube
Qg - Gate Charge: 63 nC
Pd - Power Dissipation: 34 W
Tradename: CoolMOS
Vgs th - Gate-Source Threshold Voltage: 3 V
Configuration: Single
Unit Weight: 0.090478 oz
Number of Channels: 1 Channel
Typical Turn-On Delay Time: 15 ns
Manufacturer: Infineon
Transistor Polarity: N-Channel
Channel Mode: Enhancement
Part # Aliases: IPA60R190C6 IPA60R190C6XK SP000621152
RoHS:  Details
Id - Continuous Drain Current: 59 A
Rise Time: 11 ns
Maximum Operating Temperature: + 150 C
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