| BSG0811NDATMA1 | ||
|---|---|---|
|
|
||
|
||
| 产品描述：
Dual N-Channel 25 V 3/0.8 mOhm 5.6/20 nC OptiMOS™ Power Mosfet - TISON8-4
|
||
| 标准包装：1 | ||
| 数据手册： -- |
- 规格参数
- 产品特性
- 技术文档
- 产品评论
| FET Feature | Logic Level Gate, 4.5V Drive |
|---|---|
| Package / Case | 8-PowerTDFN |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 19A, 41A |
| Part Status | Active |
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Packaging | Tape & Reel (TR) |
| Rds On (Max) @ Id, Vgs | 3 mOhm @ 20A, 10V |
| Power - Max | 2.5W |
| Supplier Device Package | PG-TISON-8 |
| Gate Charge (Qg) @ Vgs | 8.4nC @ 4.5V |
| Category | Discrete Semiconductor Products |
| FET Type | 2 N-Channel (Dual) Asymmetrical |
| Family | Transistors - FETs, MOSFETs - Arrays |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 1100pF @ 12V |
| ECCN | EAR99 |
登录之后就可发表评论
请输入下方图片中的验证码：