BUZ30A H specifications -Ameya360 electronic components purchase network


BUZ30A H

ACTIVE PG-TO220-3
Product description : BUZ30A H , N沟道 MOSFET 晶体管, 21 A, Vds=200 V, 3针 TO-220封装
SPQ：500
Datasheet : BUZ30A H.pdf

FET Feature	Standard
Package / Case	TO-220-3
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25°C	21A (Tc)
Category	Discrete Semiconductor Products
FET Type	MOSFET N-Channel, Metal Oxide
Family	Transistors - FETs, MOSFETs - Single
Mounting Type	Through Hole
Input Capacitance (Ciss) @ Vds	1900pF @ 25V
Rds On (Max) @ Id, Vgs	130 mOhm @ 13.5A, 10V
Power - Max	125W
Supplier Device Package	PG-TO220-3
Part Status	Active
Manufacturer	Infineon Technologies
Series	SIPMOS®
Vgs(th) (Max) @ Id	4V @ 1mA
Operating Temperature	-55°C ~ 150°C (TJ)
Packaging	Tube

Datasheet： BUZ30A H.pdf

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Stock code :	426721
Mfg name :	Infineon Technologies
MPN :	BUZ30A H
Product description :	BUZ30A H , N沟道 MOSFET 晶体管, 21 A, Vds=200 V, 3针 TO-220封装

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