| BSZ0909NS | ||
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| 产品描述：
34V,12mΩ,36A,N-Channel Power MOSFET
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| 标准包装：1 | ||
| 数据手册： | ||
| ECAD模型:
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| Qg - Gate Charge: | 6.1 nC |
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| Packaging: | Reel |
| Pd - Power Dissipation: | 25 W |
| Tradename: | OptiMOS |
| Configuration: | Single Quad Drain Triple Source |
| Mounting Style: | SMD/SMT |
| Fall Time: | 2 ns |
| Series: | OptiMOS |
| Factory Pack Quantity: | 5000 |
| Part # Aliases: | BSZ0909NSATMA1 BSZ0909NSXT SP000832568 |
| RoHS: | Details |
| Id - Continuous Drain Current: | 36 A |
| Rise Time: | 2.2 ns |
| Maximum Operating Temperature: | + 150 C |
| Rds On - Drain-Source Resistance: | 12 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Package / Case: | TDSON-8 |
| Vgs - Gate-Source Voltage: | 20 V |
| Number of Channels: | 1 Channel |
| Manufacturer: | Infineon |
| Transistor Polarity: | N-Channel |
| Brand: | Infineon Technologies |
| Typical Turn-Off Delay Time: | 16 nS |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 34 V |
| Transistor Type: | 1 N-Channel |
| 数据手册： |
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