BSZ0909NS specifications -Ameya360 electronic components purchase network


BSZ0909NS

ACTIVE
Product description : 34V,12mΩ,36A,N-Channel Power MOSFET
SPQ：1
Datasheet : BSZ0909NS.pdf

Qg - Gate Charge:	6.1 nC
Packaging:	Reel
Pd - Power Dissipation:	25 W
Tradename:	OptiMOS
Configuration:	Single Quad Drain Triple Source
Mounting Style:	SMD/SMT
Fall Time:	2 ns
Series:	OptiMOS
Factory Pack Quantity:	5000
Part # Aliases:	BSZ0909NSATMA1 BSZ0909NSXT SP000832568
RoHS:	Details
Id - Continuous Drain Current:	36 A
Rise Time:	2.2 ns
Maximum Operating Temperature:	+ 150 C
Rds On - Drain-Source Resistance:	12 mOhms
Minimum Operating Temperature:	- 55 C
Technology:	Si
Package / Case:	TDSON-8
Vgs - Gate-Source Voltage:	20 V
Number of Channels:	1 Channel
Manufacturer:	Infineon
Transistor Polarity:	N-Channel
Brand:	Infineon Technologies
Typical Turn-Off Delay Time:	16 nS
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	34 V
Transistor Type:	1 N-Channel

Datasheet： BSZ0909NS.pdf

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