| BSZ060NE2LS | ||
|---|---|---|
|
|
||
|
||
| 产品描述：
25V,6mΩ,40A,N-Channel Power MOSFET
|
||
| 标准包装：1 | ||
| 数据手册： |
- 规格参数
- 产品特性
- 技术文档
- 产品评论
| Qg - Gate Charge: | 9.1 nC |
|---|---|
| Packaging: | Reel |
| Pd - Power Dissipation: | 26 W |
| Tradename: | OptiMOS |
| Configuration: | Single Quad Drain Triple Source |
| Mounting Style: | SMD/SMT |
| Fall Time: | 1.8 nS |
| Series: | OptiMOS |
| Factory Pack Quantity: | 5000 |
| Part # Aliases: | BSZ060NE2LSATMA1 BSZ060NE2LSXT SP000776122 |
| RoHS: | Details |
| Id - Continuous Drain Current: | 40 A |
| Rise Time: | 2.2 ns |
| Maximum Operating Temperature: | + 150 C |
| Rds On - Drain-Source Resistance: | 6 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Package / Case: | TDSON-8 |
| Vgs - Gate-Source Voltage: | 20 V |
| Number of Channels: | 1 Channel |
| Manufacturer: | Infineon |
| Transistor Polarity: | N-Channel |
| Brand: | Infineon Technologies |
| Typical Turn-Off Delay Time: | 11 nS |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 26 V |
| Transistor Type: | 1 N-Channel |
| 数据手册： |
|---|
登录之后就可发表评论
请输入下方图片中的验证码：