BSZ018NE2LS specifications -Ameya360 electronic components purchase network


BSZ018NE2LS

ACTIVE
Product description : 25V,1.8mΩ,40A,N-Channel Power MOSFET
SPQ：1
Datasheet : BSZ018NE2LS.pdf

Packaging:	Reel
Qg - Gate Charge:	29 nC
Pd - Power Dissipation:	69 W
Tradename:	OptiMOS
Vgs th - Gate-Source Threshold Voltage:	1.2 V to 2 V
Vgs - Gate-Source Voltage:	20 V
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	5.5 ns
Manufacturer:	Infineon
Transistor Polarity:	N-Channel
Brand:	Infineon Technologies
Typical Turn-Off Delay Time:	26 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	25 V
Transistor Type:	1 N-Channel
Rds On - Drain-Source Resistance:	1.8 MOhms
Minimum Operating Temperature:	- 55 C
Technology:	Si
Package / Case:	TDSON-8
Configuration:	Single Quad Drain
Mounting Style:	SMD/SMT
Fall Time:	3.4 ns
Forward Transconductance - Min:	140 S
Series:	OptiMOS
Factory Pack Quantity:	5000
Part # Aliases:	BSZ018NE2LSATMA1 BSZ018NE2LSXT SP000756338
RoHS:	Details
Id - Continuous Drain Current:	40 A
Rise Time:	4.4 ns
Maximum Operating Temperature:	+ 150 C

Datasheet： BSZ018NE2LS.pdf

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