| BSS816NWH6327XTSA1 | ||
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| 产品描述：
Transistor: N-MOSFET; unipolar; 20V; 1.4A; 0.5W; SOT323
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| 标准包装：1 | ||
| 数据手册： |
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| Qg - Gate Charge: | 0.2 nC |
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| Packaging: | Reel |
| Pd - Power Dissipation: | 500 mW |
| Package / Case: | SOT-323-3 |
| Vgs - Gate-Source Voltage: | 8 V |
| Mounting Style: | SMD/SMT |
| Fall Time: | 2.2 ns |
| Manufacturer: | Infineon |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Part # Aliases: | BSS816NW BSS816NWH6327XT H6327 SP000917562 |
| RoHS: | Details |
| Id - Continuous Drain Current: | 1.4 A |
| Rise Time: | 9 ns |
| Maximum Operating Temperature: | + 150 C |
| Rds On - Drain-Source Resistance: | 160 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Vgs th - Gate-Source Threshold Voltage: | 300 mV to 750 mV |
| Unit Weight: | 0.004395 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 5.3 ns |
| Series: | BSS816 |
| Factory Pack Quantity: | 3000 |
| Brand: | Infineon Technologies |
| Typical Turn-Off Delay Time: | 11 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Transistor Type: | 1 N-Channel |
| 数据手册： |
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