BSS606NH6327XTSA1 specifications -Ameya360 electronic components purchase network


BSS606NH6327XTSA1

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Product description : Transistor: N-MOSFET; unipolar; 60V; 3.2A; 1W; PG-SOT89
SPQ：1
Datasheet : BSS606NH6327XTSA1.pdf

Rds On - Drain-Source Resistance:	60 mOhms
Number of Channels:	1 Channel
Manufacturer:	Infineon
Pd - Power Dissipation:	1 W
Factory Pack Quantity:	1000
Brand:	Infineon Technologies
RoHS:	Details
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	60 V
Unit Weight:	0.004603 oz
Mounting Style:	SMD/SMT
Packaging:	Reel
Qg - Gate Charge:	1.6 nC
Series:	BSS606
Transistor Polarity:	N-Channel
Technology:	Si
Part # Aliases:	BSS606N H6327 SP000691152
Package / Case:	SOT-89-3
Id - Continuous Drain Current:	2.3 A
Configuration:	Single
Transistor Type:	1 N-Channel

Datasheet： BSS606NH6327XTSA1.pdf

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Stock code :	425079
Mfg name :	Infineon Technologies
MPN :	BSS606NH6327XTSA1
Product description :	Transistor: N-MOSFET; unipolar; 60V; 3.2A; 1W; PG-SOT89

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