| BSS209PWH6327XTSA1 | ||
|---|---|---|
|
|
||
|
||
| 产品描述：
Transistor: P-MOSFET; unipolar; -20V; -0.63A; 0.3W; PG-SOT-323
|
||
| 标准包装：1 | ||
| 数据手册： |
- 规格参数
- 产品特性
- 技术文档
- 产品评论
| Qg - Gate Charge: | - 1 nC |
|---|---|
| Packaging: | Reel |
| Pd - Power Dissipation: | 300 mW |
| Package / Case: | SOT-323-3 |
| Configuration: | Single |
| Unit Weight: | 0.004395 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 2.6 ns |
| Manufacturer: | Infineon |
| Transistor Polarity: | P-Channel |
| Channel Mode: | Enhancement |
| Part # Aliases: | BSS209PW BSS209PWH6327XT H6327 SP000750498 |
| RoHS: | Details |
| Id - Continuous Drain Current: | - 630 mA |
| Rise Time: | 7 ns |
| Maximum Operating Temperature: | + 150 C |
| Rds On - Drain-Source Resistance: | 581 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Vgs th - Gate-Source Threshold Voltage: | - 0.9 V |
| Vgs - Gate-Source Voltage: | 12 V |
| Mounting Style: | SMD/SMT |
| Fall Time: | 4.6 ns |
| Forward Transconductance - Min: | 0.87 S |
| Series: | BSS209 |
| Factory Pack Quantity: | 3000 |
| Brand: | Infineon Technologies |
| Typical Turn-Off Delay Time: | 6 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | - 20 V |
| Transistor Type: | 1 P-Channel |
| ECCN | EAR99 |
| 数据手册： |
|---|
登录之后就可发表评论
请输入下方图片中的验证码：