BSP322PH6327XTSA1 specifications -Ameya360 electronic components purchase network


BSP322PH6327XTSA1

ACTIVE PG-SOT223-4 EAR99
Product description : Transistor: P-MOSFET; unipolar; -100V; -1A; 1.8W; PG-SOT223
SPQ：1
Datasheet : BSP322PH6327XTSA1.pdf

Package / Case	TO-261-4, TO-261AA
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	1A (Tc)
Part Status	Active
Manufacturer	Infineon Technologies
Series	SIPMOS®
Vgs(th) (Max) @ Id	1V @ 380µA
Operating Temperature	-55°C ~ 150°C (TJ)
Packaging	Digi-Reel®
Rds On (Max) @ Id, Vgs	800 mOhm @ 1A, 10V
Power - Max	1.8W
Supplier Device Package	PG-SOT223-4
Gate Charge (Qg) @ Vgs	16.5nC @ 10V
Category	Discrete Semiconductor Products
FET Type	MOSFET P-Channel, Metal Oxide
Family	Transistors - FETs, MOSFETs - Single
Mounting Type	Surface Mount
Input Capacitance (Ciss) @ Vds	372pF @ 25V
ECCN	EAR99

Datasheet： BSP322PH6327XTSA1.pdf

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Stock code :	425004
Mfg name :	Infineon Technologies
MPN :	BSP322PH6327XTSA1
Product description :	Transistor: P-MOSFET; unipolar; -100V; -1A; 1.8W; PG-SOT223

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