BSP320SH6327XTSA1
  • ACTIVE
  • PG-SOT223-4
  • EAR99
Product description : Transistor: N-MOSFET; unipolar; 60V; 2.9A; 1.8W; SOT223
SPQ:1
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Package / Case TO-261-4, TO-261AA
FET Feature Standard
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 2.9A (Tj)
Part Status New Product
Manufacturer Infineon Technologies
Series SIPMOS™
Vgs(th) (Max) @ Id 4V @ 20µA
Operating Temperature -55°C ~ 150°C (TJ)
Packaging Digi-Reel®
Rds On (Max) @ Id, Vgs 120 mOhm @ 2.9A, 10V
Power - Max 1.8W
Supplier Device Package PG-SOT223-4
Gate Charge (Qg) @ Vgs 12nC @ 10V
Category Discrete Semiconductor Products
FET Type MOSFET N-Channel, Metal Oxide
Family Transistors - FETs, MOSFETs - Single
Mounting Type Surface Mount
Input Capacitance (Ciss) @ Vds 340pF @ 25V
ECCN EAR99
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