BSP296NH6327XTSA1 specifications -Ameya360 electronic components purchase network


BSP296NH6327XTSA1

ACTIVE EAR99
Product description : Single N-Channel 100 V 600 mOhm 4.5 nC OptiMOS™ Power Mosfet - SOT-223
SPQ：1
Datasheet : BSP296NH6327XTSA1.pdf

Qg - Gate Charge:	13.8 nC
Packaging:	Reel
Pd - Power Dissipation:	1.79 W
Package / Case:	SOT-223-3
Vgs - Gate-Source Voltage:	20 V
Mounting Style:	SMD/SMT
Fall Time:	21.4 ns
Forward Transconductance - Min:	0.6 S
Series:	BSP296
Factory Pack Quantity:	1000
Brand:	Infineon Technologies
Typical Turn-Off Delay Time:	37.4 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	100 V
Transistor Type:	1 N-Channel
ECCN	EAR99
Rds On - Drain-Source Resistance:	700 mOhms
Minimum Operating Temperature:	- 55 C
Technology:	Si
Vgs th - Gate-Source Threshold Voltage:	1.8 V
Unit Weight:	0.008826 oz
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	5.2 ns
Manufacturer:	Infineon
Transistor Polarity:	N-Channel
Channel Mode:	Enhancement
Part # Aliases:	BSP296N H6327 SP001059330
RoHS:	Details
Id - Continuous Drain Current:	1.1 A
Rise Time:	7.9 ns
Maximum Operating Temperature:	+ 150 C

Datasheet： BSP296NH6327XTSA1.pdf

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Stock code :	424983
Mfg name :	Infineon Technologies
MPN :	BSP296NH6327XTSA1
Product description :	Single N-Channel 100 V 600 mOhm 4.5 nC OptiMOS™ Power Mosfet - SOT-223

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