| BSP149H6327XTSA1 | ||
|---|---|---|
|
|
||
|
||
| 产品描述：
Single N-Channel 200 V 3.5 Ohm 11 nC SIPMOS® Power Mosfet - SOT-223
|
||
| 标准包装：1 | ||
| 数据手册： -- |
- 规格参数
- 产品特性
- 技术文档
- 产品评论
| Package / Case | TO-261-4, TO-261AA |
|---|---|
| FET Feature | Depletion Mode |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 660mA (Ta) |
| Part Status | Active |
| Manufacturer | Infineon Technologies |
| Series | SIPMOS® |
| Vgs(th) (Max) @ Id | 1V @ 400µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Packaging | Digi-Reel® |
| Rds On (Max) @ Id, Vgs | 1.8 Ohm @ 660mA, 10V |
| Power - Max | 1.8W |
| Supplier Device Package | PG-SOT223-4 |
| Gate Charge (Qg) @ Vgs | 14nC @ 5V |
| Category | Discrete Semiconductor Products |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | Transistors - FETs, MOSFETs - Single |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 430pF @ 25V |
| ECCN | EAR99 |
登录之后就可发表评论
请输入下方图片中的验证码：