BSO303SP H
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标准包装:2500
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Packaging: Reel
Qg - Gate Charge: - 40 nC
Pd - Power Dissipation: 2.5 W
Tradename: OptiMOS
Configuration: Single
Unit Weight: 0.019048 oz
Number of Channels: 1 Channel
Typical Turn-On Delay Time: 10 ns
Manufacturer: Infineon
Transistor Polarity: P-Channel
Channel Mode: Enhancement
Part # Aliases: BSO303SPHXT BSO303SPHXUMA1 SP000613848
RoHS:  Details
Id - Continuous Drain Current: - 9.1 A
Rise Time: 11 ns
Maximum Operating Temperature: + 150 C
Rds On - Drain-Source Resistance: 21 mOhms
Minimum Operating Temperature: - 55 C
Technology: Si
Package / Case: SOIC-8
Vgs - Gate-Source Voltage: 20 V
Mounting Style: SMD/SMT
Fall Time: 33 ns
Forward Transconductance - Min: 19 S
Series: OptiMOS P
Factory Pack Quantity: 2500
Brand: Infineon Technologies
Typical Turn-Off Delay Time: 42 ns
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: - 30 V
Transistor Type: 1 P-Channel
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