| BSN20-7 | ||
|---|---|---|
|
|
||
|
||
| 产品描述：
N-Channel 50 V 2 Ohm Surface Mount Enhancement Mode MOSFET - SOT-23-3
|
||
| 标准包装：3000 | ||
| 数据手册： |
- 规格参数
- 产品特性
- 技术文档
- 产品评论
| Qg - Gate Charge: | 800 pC |
|---|---|
| Packaging: | Reel |
| Pd - Power Dissipation: | 600 mW |
| Package / Case: | SOT-23-3 |
| Vgs - Gate-Source Voltage: | 20 V |
| Mounting Style: | SMD/SMT |
| Fall Time: | 8.3 ns |
| Manufacturer: | Diodes Incorporated |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 9.45 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 50 V |
| Transistor Type: | 1 N-Channel |
| ECCN | EAR99 |
| Rds On - Drain-Source Resistance: | 1.8 Ohms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Configuration: | Single |
| Unit Weight: | 0.000282 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 2.93 ns |
| Series: | BSN20 |
| Factory Pack Quantity: | 3000 |
| Brand: | Diodes Incorporated |
| RoHS: | Details |
| Id - Continuous Drain Current: | 500 mA |
| Rise Time: | 2.99 ns |
| Maximum Operating Temperature: | + 150 C |
| 数据手册： |
|---|
登录之后就可发表评论
请输入下方图片中的验证码：