| BSM120D12P2C005 | ||
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| 产品描述：
SiC Power Module 120A 1200V RoHSconf
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| 标准包装：1 | ||
| 数据手册： |
- 规格参数
- 产品特性
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| Id - Continuous Drain Current: | 120 A |
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| RoHS: | Details |
| Factory Pack Quantity: | 12 |
| Minimum Operating Temperature: | - 40 C |
| Series: | BSMx |
| Length: | 122 mm |
| Width: | 45.6 mm |
| Product: | Power Semiconductor Modules |
| Height: | 21.1 mm |
| Configuration: | Half-Bridge |
| Type: | SiC Power Module |
| Maximum Operating Temperature: | + 150 C |
| FET Feature | Silicon Carbide (SiC) |
| FET Type | 2 N-Channel (Half Bridge) |
| Vgs(th) (Max) @ Id | 2.7V @ 22mA |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Power - Max | 780W |
| Lead Free Status / RoHS Status | 1 |
| RoHS | Lead free / RoHS Compliant |
| Product Category: | Discrete Semiconductor Modules |
| Brand: | ROHM Semiconductor |
| Operating Temperature Range: | - 40 C to + 150 C |
| Pd - Power Dissipation: | 780 W |
| Manufacturer: | ROHM Semiconductor |
| Packaging: | Bulk |
| Number of Channels: | 1 Channel |
| Vgs th - Gate-Source Threshold Voltage: | 2.7 V |
| Vds - Drain-Source Breakdown Voltage: | 1200 V |
| Vgs - Gate-Source Voltage: | 22 V |
| Mounting Style: | Screw |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Categories | Discrete Semiconductor Products -> Transistors - FETs, MOSFETs - Arrays |
| Input Capacitance (Ciss) (Max) @ Vds | 14000pF @ 10V |
| Supplier Device Package | Module |
| Package / Case | Module |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
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