| BSC067N06LS3 G | ||
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| Product description : BSC067N06LS3 G , N沟道 MOSFET 晶体管, 50 A, Vds=60 V, 8针 TDSON封装 | ||
| SPQ：1 | ||
| Datasheet : |
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- Product Attributes
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| Width: | 6.1 mm |
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| Rds On - Drain-Source Resistance: | 6.7 mOhms |
| Pd - Power Dissipation: | 2.5 W |
| Tradename: | OptiMOS |
| Height: | 1.1 mm |
| Vgs - Gate-Source Voltage: | 20 V |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 15 ns |
| Manufacturer: | Infineon |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Part # Aliases: | BSC067N06LS3GATMA1 BSC067N06LS3GXT SP000451084 |
| RoHS: | Details |
| Id - Continuous Drain Current: | 50 A |
| Rise Time: | 26 ns |
| Maximum Operating Temperature: | + 150 C |
| Packaging: | Reel |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Package / Case: | TDSON-8 |
| Configuration: | Single Quad Drain Triple Source |
| Mounting Style: | SMD/SMT |
| Fall Time: | 7 ns |
| Length: | 5.35 mm |
| Series: | OptiMOS 3 |
| Factory Pack Quantity: | 5000 |
| Brand: | Infineon Technologies |
| Typical Turn-Off Delay Time: | 37 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Transistor Type: | 1 N-Channel |
| Datasheet： |
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| stock | 2101 | Update On 2025-06-03 |
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| Lead-Time | -- | |
| SPQ/MOQ | 1/1 | |
| Location | -- | |
| DateCode | -- |
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