| BSC028N06NS | ||
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| Product description : 60V,100A,N Channel Power MOSFET | ||
| SPQ：1 | ||
| Datasheet : -- |
- Specifications
- Product Attributes
- Documents
- Product reviews
| Qg - Gate Charge: | 37 nC |
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| Packaging: | Reel |
| Pd - Power Dissipation: | 83 W |
| Package / Case: | TDSON-8 |
| Mounting Style: | SMD/SMT |
| Fall Time: | 8 ns |
| Forward Transconductance - Min: | 100 S / 50 S |
| Series: | BSC028N06 |
| Factory Pack Quantity: | 5000 |
| Part # Aliases: | BSC028N06NSATMA1 BSC028N06NSXT SP000917416 |
| RoHS: | Details |
| Id - Continuous Drain Current: | 100 A |
| Rise Time: | 38 ns |
| Maximum Operating Temperature: | + 150 C |
| Rds On - Drain-Source Resistance: | 2.8 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Vgs - Gate-Source Voltage: | 20 V |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 11 ns |
| Manufacturer: | Infineon |
| Transistor Polarity: | N-Channel |
| Brand: | Infineon Technologies |
| Typical Turn-Off Delay Time: | 19 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Transistor Type: | 1 N-Channel |
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