| BSC016N06NS | ||
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| 产品描述：
60V,100A,1.6mOhm,N-channel Power MOSFET
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| 标准包装：1 | ||
| 数据手册： -- |
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| Packaging: | Reel |
|---|---|
| Qg - Gate Charge: | 71 nC |
| Pd - Power Dissipation: | 139 W |
| Package / Case: | TDSON-8 |
| Mounting Style: | SMD/SMT |
| Fall Time: | 9 ns |
| Forward Transconductance - Min: | 140 S / 70 S |
| Series: | BSC016N06 |
| Factory Pack Quantity: | 5000 |
| Part # Aliases: | BSC016N06NSATMA1 BSC016N06NSXT SP000924882 |
| RoHS: | Details |
| Id - Continuous Drain Current: | 100 A |
| Rise Time: | 9 ns |
| Maximum Operating Temperature: | + 150 C |
| Rds On - Drain-Source Resistance: | 1.6 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Vgs - Gate-Source Voltage: | 20 V |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 19 ns |
| Manufacturer: | Infineon |
| Transistor Polarity: | N-Channel |
| Brand: | Infineon Technologies |
| Typical Turn-Off Delay Time: | 35 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Transistor Type: | 1 N-Channel |
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