| BSC014NE2LSI | ||
|---|---|---|
|
|
||
|
||
| Product description : 25V,1.4mΩ,100A,N-Channel Power MOSFET | ||
| SPQ：1 | ||
| Datasheet : -- |
- Specifications
- Product Attributes
- Documents
- Product reviews
| Rds On - Drain-Source Resistance: | 1.2 mOhms |
|---|---|
| Width: | 6.35 mm |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Vgs th - Gate-Source Threshold Voltage: | 1.2 V |
| Configuration: | 1 N-Channel |
| Mounting Style: | SMD/SMT |
| Fall Time: | 3.6 ns |
| Length: | 6.35 mm |
| Manufacturer: | Infineon |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Part # Aliases: | BSC014NE2LSIATMA1 BSC014NE2LSIXT SP000911336 |
| RoHS: | Details |
| Id - Continuous Drain Current: | 100 A |
| Rise Time: | 5 ns |
| Maximum Operating Temperature: | + 150 C |
| Packaging: | Reel |
| Qg - Gate Charge: | 52 nC |
| Pd - Power Dissipation: | 74 W |
| Package / Case: | TDSON-8 |
| Height: | 1.1 mm |
| Vgs - Gate-Source Voltage: | +/- 20 V |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 5 ns, 5.7 ns |
| Forward Transconductance - Min: | 70 S |
| Series: | BSC014NE2 |
| Factory Pack Quantity: | 5000 |
| Brand: | Infineon Technologies |
| Typical Turn-Off Delay Time: | 25 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 25 V |
| Transistor Type: | 1 N-Channel |
You can comment after logging in.
Please enter the verification code in the image below：