STW12N120K5
  • 量产中
  • TO-247
  • EAR99
产品描述:
Single N-Channel 1200 V 250 W 44.2 nC Silicon Through Hole Mosfet - TO-247-3
标准包装:1
数据手册: --
ECAD模型:
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FET Feature Standard
Package / Case TO-247-3
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Part Status Active
Manufacturer STMicroelectronics
Series MDmesh™ K5
Vgs(th) (Max) @ Id 5V @ 100µA
Operating Temperature -55°C ~ 150°C (TJ)
Packaging Tube
Rds On (Max) @ Id, Vgs 690 mOhm @ 6A, 10V
Power - Max 250W
Supplier Device Package TO-247
Gate Charge (Qg) @ Vgs 44.2nC @ 10V
Category Discrete Semiconductor Products
FET Type MOSFET N-Channel, Metal Oxide
Family Transistors - FETs, MOSFETs - Single
Mounting Type Through Hole
Input Capacitance (Ciss) @ Vds 1370pF @ 100V
ECCN EAR99
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