BD679AS specifications -Ameya360 electronic components purchase network


BD679AS

ACTIVE EAR99
Product description : NPN 40 W 80 V 4 A Through Hole Epitaxial Silicon Transistor - TO-126
SPQ：1
Datasheet : BD679AS.pdf

Collector- Base Voltage VCBO:	80 V
Maximum Collector Cut-off Current:	200 uA
Minimum Operating Temperature:	- 65 C
Package / Case:	TO-126
Configuration:	Single
Unit Weight:	0.026843 oz
Maximum DC Collector Current:	4 A
Continuous Collector Current:	4 A
Manufacturer:	Fairchild Semiconductor
Factory Pack Quantity:	2000
Part # Aliases:	BD679AS_NL
Product Category:	Darlington Transistors
Maximum Operating Temperature:	+ 150 C
Width:	3.25 mm
Packaging:	Bulk
Pd - Power Dissipation:	40 W
Height:	11 mm
Mounting Style:	Through Hole
Emitter- Base Voltage VEBO:	5 V
Length:	8 mm
DC Collector/Base Gain hfe Min:	750
Transistor Polarity:	NPN
Brand:	Fairchild Semiconductor
RoHS:	Details
Collector- Emitter Voltage VCEO Max:	80 V
ECCN	EAR99

Datasheet： BD679AS.pdf

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Stock code :	420418
Mfg name :	onsemi
MPN :	BD679AS
Product description :	NPN 40 W 80 V 4 A Through Hole Epitaxial Silicon Transistor - TO-126

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