BD13916S
  • 量产中
  • TO-126
  • EAR99
产品描述:
NPN 1.25 W 80 V 1.5 A Through Hole Epitaxial Silicon Transistor - TO-126-3
标准包装:1
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Package / Case TO-225AA, TO-126-3
Power - Max 1.25W
Supplier Device Package TO-126
Part Status Active
Manufacturer Fairchild Semiconductor
Family Transistors - Bipolar (BJT) - Single
Current - Collector Cutoff (Max) 100nA (ICBO)
Packaging Bulk
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Transistor Type NPN
Current - Collector (Ic) (Max) 1.5A
Category Discrete Semiconductor Products
Voltage - Collector Emitter Breakdown (Max) 80V
Mounting Type Through Hole
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 2V
ECCN EAR99
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