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| 产品描述：
BD139 Series 80 V 1.5 A NPN Epitaxial Silicon Transistor - TO-126
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| 标准包装：2000 | ||
| 数据手册： | ||
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| Package / Case | TO-225AA, TO-126-3 |
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| Power - Max | 1.25W |
| Supplier Device Package | TO-126 |
| Part Status | Active |
| Manufacturer | Fairchild Semiconductor |
| Family | Transistors - Bipolar (BJT) - Single |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 63 @ 150mA, 2V |
| ECCN | EAR99 |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 1.5A |
| Category | Discrete Semiconductor Products |
| Voltage - Collector Emitter Breakdown (Max) | 80V |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Packaging | Bulk |
| 数据手册： |
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