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| 产品描述：
TO92-3/NPN Epitaxial Silicon Transistor
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| 标准包装：1 | ||
| 数据手册： |
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| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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| Vce Saturation (Max) @ Ib, Ic | 700mV @ 50mA, 500mA |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 800mA |
| Category | Discrete Semiconductor Products |
| Voltage - Collector Emitter Breakdown (Max) | 45V |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Packaging | Tape & Reel (TR) |
| Frequency - Transition | 100MHz |
| Power - Max | 625mW |
| Supplier Device Package | TO-92-3 |
| Part Status | Active |
| Manufacturer | Fairchild Semiconductor |
| Family | Transistors - Bipolar (BJT) - Single |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 100mA, 1V |
| ECCN | EAR99 |
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