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| 产品描述：
Transistor: N-MOSFET; unipolar; 60V; 100A; 116W; VSONP8; 5x6mm
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| 标准包装：1 | ||
| 数据手册： -- | ||
| ECAD模型:
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- 规格参数
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| FET Feature | Logic Level Gate |
|---|---|
| Package / Case | 8-PowerTDFN |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 17A (Ta), 100A (Tc) |
| Part Status | Active |
| Manufacturer | Texas Instruments |
| Series | NexFET™ |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Packaging | Cut Tape (CT) |
| Rds On (Max) @ Id, Vgs | 5.9 mOhm @ 18A, 10V |
| Power - Max | 3.2W |
| Supplier Device Package | 8-VSON (5x6) |
| Gate Charge (Qg) @ Vgs | 36nC @ 10V |
| Category | Discrete Semiconductor Products |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | Transistors - FETs, MOSFETs - Single |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 2750pF @ 30V |
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