SI4174DY-T1-GE3
SI4174DY-T1-GE3
  • ACTIVE
  • 8-SO
Product description : Single N-Channel 30 V 0.013 Ohm 12 nC 2.5 W Silicon SMT Mosfet - SOIC-8
SPQ：1
Datasheet :
ECAD Model:
  • Specifications
  • Product Attributes
  • Documents
  • Product reviews

FET Feature Standard
Package / Case 8-SOIC (0.154", 3.90mm Width)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 17A (Tc)
FET Type MOSFET N-Channel, Metal Oxide
Series TrenchFET®
Mounting Type Surface Mount
Input Capacitance (Ciss) @ Vds 985pF @ 15V
RoHS Lead free / RoHS Compliant
Rds On (Max) @ Id, Vgs 9.5 mOhm @ 10A, 10V
Power - Max 5W
Supplier Device Package 8-SO
Gate Charge (Qg) @ Vgs 27nC @ 10V
Online Catalog N-Channel Standard FETs
Family FETs - Single
Vgs(th) (Max) @ Id 2.2V @ 250µA
Packaging Tape & Reel (TR)  
Datasheet：
You can comment after logging in.
  • Replacement Products
  • Associated Product
Replacement Mode
  • P2P
  • Function
  • Contain
RS6E120BGTB1
RS6E120BGTB1
ROHM Semiconductor
RS6E122BGTB1
RS6E122BGTB1
ROHM Semiconductor
2N6661JTVP02
2N6661JTVP02
Vishay
2N6661-2
2N6661-2
Vishay
2N6661JTVP02
2N6661JTVP02
Vishay
  • P2P:A direct drop-in replacement or second source option. Possible minor parametric differences. No change required in most designs.
  • Functional Equivalent:A direct replacement or second source option. Possible major parametric differences. Changes may be required in some designs.
  • Contain: The functions that one IC can achieve contain the functions that another IC can achieve.
  • For more support, please contact us.  Email:cindchen@ameya360.com  QQ:1483947296