AUIRFS8409-7P specifications -Ameya360 electronic components purchase network


AUIRFS8409-7P

ACTIVE EAR99
Product description : Transistor: N-MOSFET; unipolar; 40V; 240A; 375W; D2PAK
SPQ：1
Datasheet : AUIRFS8409-7P.pdf

Qg - Gate Charge:	305 nC
Packaging:	Tube
Pd - Power Dissipation:	375 W
Tradename:	CoolIRFet
Vgs th - Gate-Source Threshold Voltage:	3 V
Vgs - Gate-Source Voltage:	20 V
Mounting Style:	SMD/SMT
Fall Time:	107 ns
Forward Transconductance - Min:	176 S
Transistor Polarity:	N-Channel
Channel Mode:	Enhancement
Typical Turn-Off Delay Time:	149 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	40 V
Transistor Type:	1 N-Channel
ECCN	EAR99
Rds On - Drain-Source Resistance:	750 uOhms
Minimum Operating Temperature:	- 55 C
Technology:	Si
Package / Case:	TO-263-7
Configuration:	Single
Unit Weight:	0.056438 oz
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	32 ns
Manufacturer:	Infineon
Factory Pack Quantity:	50
Brand:	Infineon Technologies
RoHS:	Details
Id - Continuous Drain Current:	522 A
Rise Time:	148 ns
Maximum Operating Temperature:	+ 175 C

Datasheet： AUIRFS8409-7P.pdf

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Stock code :	410641
Mfg name :	Infineon Technologies
MPN :	AUIRFS8409-7P
Product description :	Transistor: N-MOSFET; unipolar; 40V; 240A; 375W; D2PAK

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