| Vce Saturation (Max) @ Ib, Ic | 300mV @ 100µA, 1mA |
|---|---|
| Power - Max | 360mW |
| Supplier Device Package | UB |
| Part Status | Active |
| Manufacturer | Microsemi Corporation |
| Family | Transistors - Bipolar (BJT) - Single |
| Current - Collector Cutoff (Max) | 2nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 225 @ 10mA, 5V |
| Package / Case | 3-SMD, No Lead |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 50mA |
| Category | Discrete Semiconductor Products |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Packaging | Bulk |
请输入下方图片中的验证码: