| APT60N60BCSG | ||
|---|---|---|
|
|
||
|
||
| 产品描述：
MOSFET N-CH 600V 60A TO-247
|
||
| 标准包装：1000 | ||
| 数据手册： -- |
- 规格参数
- 产品特性
- 技术文档
- 产品评论
| Qg - Gate Charge: | 150 nC |
|---|---|
| Width: | 16.26 mm |
| Pd - Power Dissipation: | 431 W |
| Package / Case: | TO-247-3 |
| Height: | 5.31 mm |
| Mounting Style: | Through Hole |
| Fall Time: | 10 ns |
| Length: | 21.46 mm |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 100 ns |
| Product Category: | MOSFET |
| Rise Time: | 20 ns |
| Maximum Operating Temperature: | + 150 C |
| Rds On - Drain-Source Resistance: | 45 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Vgs - Gate-Source Voltage: | 30 V |
| Unit Weight: | 1.340411 oz |
| Typical Turn-On Delay Time: | 30 ns |
| Manufacturer: | Microsemi |
| Factory Pack Quantity: | 26 |
| Brand: | Microsemi |
| RoHS: | Details |
| Id - Continuous Drain Current: | 60 A |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| ECCN | ECL99 |
登录之后就可发表评论
请输入下方图片中的验证码：