APT56M60B2 specifications -Ameya360 electronic components purchase network


APT56M60B2

ACTIVE EAR99
Product description : APT53N60 Series N Channel 600 V 60 A 130 mOhm 154 nC Mosfet - TO-247-3
SPQ：1000
Datasheet : APT56M60B2.pdf

Qg - Gate Charge:	280 nC
Width:	16.26 mm
Pd - Power Dissipation:	1.040 kW
Tradename:	POWER MOS 8
Vgs th - Gate-Source Threshold Voltage:	4 V
Vgs - Gate-Source Voltage:	30 V
Fall Time:	60 ns
Length:	21.46 mm
Manufacturer:	Microsemi
Factory Pack Quantity:	33
Brand:	Microsemi
RoHS:	Details
Id - Continuous Drain Current:	60 A
Rise Time:	75 ns
ECCN	EAR99
Rds On - Drain-Source Resistance:	90 mOhms
Minimum Operating Temperature:	- 55 C
Technology:	Si
Package / Case:	T-Max-3
Height:	5.31 mm
Mounting Style:	Through Hole
Typical Turn-On Delay Time:	65 ns
Forward Transconductance - Min:	55 S
Transistor Polarity:	N-Channel
Channel Mode:	Enhancement
Typical Turn-Off Delay Time:	190 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	600 V
Maximum Operating Temperature:	+ 150 C

Datasheet： APT56M60B2.pdf

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Stock code :	402039
Mfg name :	Microchip Technology
MPN :	APT56M60B2
Product description :	APT53N60 Series N Channel 600 V 60 A 130 mOhm 154 nC Mosfet - TO-247-3

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