| APT50GS60BRDQ2G | ||
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| 产品描述：
APT50GS60BRDQ2G Series 600 V 93 A Thunderbolt® High Speed NPT IGBT
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| 标准包装：1 | ||
| 数据手册： -- |
- 规格参数
- 产品特性
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| Packaging: | Tube |
|---|---|
| Collector-Emitter Saturation Voltage: | 2.8 V |
| Minimum Operating Temperature: | - 55 C |
| Pd - Power Dissipation: | 415 W |
| Gate-Emitter Leakage Current: | 100 nA |
| Height: | 5.31 mm |
| Mounting Style: | Through Hole |
| Continuous Collector Current Ic Max: | 93 A |
| Continuous Collector Current: | 93 A |
| Factory Pack Quantity: | 57 |
| RoHS: | Details |
| Collector- Emitter Voltage VCEO Max: | 600 V |
| Maximum Operating Temperature: | + 150 C |
| Width: | 16.26 mm |
| Continuous Collector Current at 25 C: | 93 A |
| Operating Temperature Range: | - 55 C to + 150 C |
| Tradename: | Thunderbolt HS |
| Package / Case: | TO-247-3 |
| Configuration: | Single |
| Unit Weight: | 1.340411 oz |
| Length: | 21.46 mm |
| Manufacturer: | Microsemi |
| Brand: | Microsemi |
| Product Category: | IGBT Transistors |
| Maximum Gate Emitter Voltage: | 30 V |
| ECCN | EAR99 |
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