IPB025N10N3GATMA1
IPB025N10N3GATMA1
  • ACTIVE
  • EAR99
Product description : Single N-Channel 100 V 2.5 mOhm 155 nC OptiMOS™ Power Mosfet - D2PAK-7
SPQ:1
Datasheet : --
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Width: 9.45 mm
Rds On - Drain-Source Resistance: 2.5 MOhms
Minimum Operating Temperature: - 55 C
Technology: Si
Package / Case: TO-263-7
Height: 4.57 mm
Vgs - Gate-Source Voltage: +/- 20 V
Mounting Style: SMD/SMT
Fall Time: 28 ns
Length: 10.31 mm
Manufacturer: Infineon
Transistor Polarity: N-Channel
Channel Mode: Enhancement
Part # Aliases: G IPB025N10N3 IPB025N10N3GXT SP000469888
RoHS:  Details
Id - Continuous Drain Current: 120 A
Rise Time: 58 ns
Maximum Operating Temperature: + 175 C
Packaging: Reel
Qg - Gate Charge: 206 nC
Pd - Power Dissipation: 300 W
Tradename: OptiMOS
Vgs th - Gate-Source Threshold Voltage: 2 V
Configuration: 1 N-Channel
Unit Weight: 0.056438 oz
Number of Channels: 1 Channel
Typical Turn-On Delay Time: 34 ns
Forward Transconductance - Min: 100 S
Series: XPB025N10
Factory Pack Quantity: 1000
Brand: Infineon Technologies
Typical Turn-Off Delay Time: 54 ns
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: 100 V
Transistor Type: 1 N-Channel
ECCN EAR99
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Offline Manufacture or Manufacture authorized supplier owned stock and price , need double confirmation and share out from them

stock59Update On
2025-06-24
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Supplier Code:SP1027

Offline Manufacture or Manufacture authorized supplier owned stock and price , need double confirmation and share out from them

$14.36726

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