VN3205N3-G
  • 量产中
  • BAG
  • EAR99
产品描述:
Transistor: N-MOSFET; unipolar; 50V; 14A; 1W; TO92
标准包装:10000
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Width: 4.19 mm
Rds On - Drain-Source Resistance: 300 mOhms
Pd - Power Dissipation: 1 W
Package / Case: TO-92-3
Configuration: Single
Unit Weight: 0.016000 oz
Number of Channels: 1 Channel
Typical Turn-On Delay Time: 10 ns
Manufacturer: Microchip
Factory Pack Quantity: 1000
Brand: Microchip Technology
RoHS:  Details
Id - Continuous Drain Current: 1.2 A
Rise Time: 15 ns
Type: FET
ECCN EAR99
Package / Case BAG
Packaging: Bulk
Minimum Operating Temperature: - 55 C
Technology: Si
Height: 5.33 mm
Vgs - Gate-Source Voltage: 20 V
Mounting Style: Through Hole
Fall Time: 25 ns
Length: 5.21 mm
Transistor Polarity: N-Channel
Channel Mode: Enhancement
Typical Turn-Off Delay Time: 25 ns
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: 50 V
Transistor Type: 1 N-Channel
Maximum Operating Temperature: + 150 C
SDP 3-TO-92
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