NTMD6N02R2G
  • 量产中
  • 8-SOIC N
产品描述:
Dual N-Channel 20 V 35 mOhm 2 W Surface Mount Power MOSFET - SOIC-8
标准包装:1
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FET Feature Logic Level Gate
Package / Case 8-SOIC (0.154", 3.90mm Width)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 3.92A
PCN Design/Specification Multiple Devices Copper Wire 20/Aug/2008
Online Catalog N-Channel Logic Level Gate FETs
Mounting Type Surface Mount
Input Capacitance (Ciss) @ Vds 1100pF @ 16V
RoHS Lead free / RoHS Compliant
Rds On (Max) @ Id, Vgs 35 mOhm @ 6A, 4.5V
Power - Max 730mW
Supplier Device Package 8-SOIC N
Gate Charge (Qg) @ Vgs 20nC @ 4.5V
FET Type 2 N-Channel (Dual)
Family FETs - Arrays
Vgs(th) (Max) @ Id 1.2V @ 250µA
Packaging Cut Tape (CT)  
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