NTMD6N02R2G | ||
---|---|---|
|
||
|
||
产品描述:
Dual N-Channel 20 V 35 mOhm 2 W Surface Mount Power MOSFET - SOIC-8
|
||
标准包装:1 | ||
数据手册: |
FET Feature | Logic Level Gate |
---|---|
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 3.92A |
PCN Design/Specification | Multiple Devices Copper Wire 20/Aug/2008 |
Online Catalog | N-Channel Logic Level Gate FETs |
Mounting Type | Surface Mount |
Input Capacitance (Ciss) @ Vds | 1100pF @ 16V |
RoHS | Lead free / RoHS Compliant |
Rds On (Max) @ Id, Vgs | 35 mOhm @ 6A, 4.5V |
Power - Max | 730mW |
Supplier Device Package | 8-SOIC N |
Gate Charge (Qg) @ Vgs | 20nC @ 4.5V |
FET Type | 2 N-Channel (Dual) |
Family | FETs - Arrays |
Vgs(th) (Max) @ Id | 1.2V @ 250µA |
Packaging | Cut Tape (CT) |
数据手册: |
---|
请输入下方图片中的验证码: