NTMD6N02R2G specifications -Ameya360 electronic components purchase network


NTMD6N02R2G

ACTIVE 8-SOIC N
Product description : Dual N-Channel 20 V 35 mOhm 2 W Surface Mount Power MOSFET - SOIC-8
SPQ：1
Datasheet : NTMD6N02R2G.pdf

FET Feature	Logic Level Gate
Package / Case	8-SOIC (0.154", 3.90mm Width)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	3.92A
PCN Design/Specification	Multiple Devices Copper Wire 20/Aug/2008
Online Catalog	N-Channel Logic Level Gate FETs
Mounting Type	Surface Mount
Input Capacitance (Ciss) @ Vds	1100pF @ 16V
RoHS	Lead free / RoHS Compliant
Rds On (Max) @ Id, Vgs	35 mOhm @ 6A, 4.5V
Power - Max	730mW
Supplier Device Package	8-SOIC N
Gate Charge (Qg) @ Vgs	20nC @ 4.5V
FET Type	2 N-Channel (Dual)
Family	FETs - Arrays
Vgs(th) (Max) @ Id	1.2V @ 250µA
Packaging	Cut Tape (CT)

Datasheet： NTMD6N02R2G.pdf

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Stock code :	38051
Mfg name :	onsemi
MPN :	NTMD6N02R2G
Product description :	Dual N-Channel 20 V 35 mOhm 2 W Surface Mount Power MOSFET - SOIC-8

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