IRLHS6342TRPBF specifications -Ameya360 electronic components purchase network


IRLHS6342TRPBF

ACTIVE 6-PQFN (2x2)
Product description : Single N-Channel 30 V 19.5 mOhm 11 nC HEXFET® Power Mosfet - PQFN 2 x 2 mm
SPQ：1
Datasheet : IRLHS6342TRPBF.pdf

FET Feature	Logic Level Gate
Package / Case	6-PowerVDFN
Power - Max	2.1W
Supplier Device Package	6-PQFN (2x2)
Gate Charge (Qg) @ Vgs	11nC @ 4.5V
FET Type	MOSFET N-Channel, Metal Oxide
Online Catalog	N-Channel Logic Level Gate FETs
Family	FETs - Single
Vgs(th) (Max) @ Id	1.1V @ 10µA
Packaging	Tape & Reel (TR)
Rds On (Max) @ Id, Vgs	15.5 mOhm @ 8.5A, 4.5V
PCN Assembly/Origin	Mosfet Backend Wafer Processing 23/Oct/2013
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	8.7A (Ta), 19A (Tc)
Product Training Modules	High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below
Design Resources	IRLHS6342TR2PBF Saber Model IRLHS6342TR2PBF Spice Model
Series	HEXFET®
Mounting Type	Surface Mount
Input Capacitance (Ciss) @ Vds	1019pF @ 25V
RoHS	Lead free / RoHS Compliant

Datasheet： IRLHS6342TRPBF.pdf

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P2P:A direct drop-in replacement or second source option. Possible minor parametric differences. No change required in most designs.
Functional Equivalent:A direct replacement or second source option. Possible major parametric differences. Changes may be required in some designs.
Contain: The functions that one IC can achieve contain the functions that another IC can achieve.
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Stock code :	37462
Mfg name :	Infineon Technologies
MPN :	IRLHS6342TRPBF
Product description :	Single N-Channel 30 V 19.5 mOhm 11 nC HEXFET® Power Mosfet - PQFN 2 x 2 mm

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