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| 产品描述：
Transistor: P-MOSFET; unipolar; -60V; -2A; 2.6W; SOT223
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| 标准包装：1 | ||
| 数据手册： |
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| FET Feature | Logic Level Gate |
|---|---|
| Package / Case | TO-261-4, TO-261AA |
| Drain to Source Voltage (Vdss) | 60V |
| Gate Charge (Qg) @ Vgs | 6.4nC @ 10V |
| FET Type | MOSFET P-Channel, Metal Oxide |
| Series | DeepGATE™, STripFET™ VI |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 340pF @ 48V |
| RoHS | Lead free / RoHS Compliant |
| Rds On (Max) @ Id, Vgs | 160 mOhm @ 1.5A, 10V |
| Power - Max | 2.6W |
| Supplier Device Package | SOT-223 |
| Other Related Documents | STN3P6F6 View All Specifications |
| Online Catalog | P-Channel Logic Level Gate FETs |
| Family | FETs - Single |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Packaging | Tape & Reel (TR) |
| 数据手册： |
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