STGB20H60DF specifications -Ameya360 electronic components purchase network


STGB20H60DF

ACTIVE D2PAK
Product description : STMicroelectronics STGB20H60DF, N沟道 IGBT 晶体管, 40 A, Vce=600 V, 3针 D2PAK封装
SPQ：1
Datasheet : STGB20H60DF.pdf

Current - Collector Pulsed (Icm)	80A
Power - Max	167W
IGBT Type	Trench Field Stop
Td (on/off) @ 25°C	42.5ns/177ns
Part Status	Active
Manufacturer	STMicroelectronics
Gate Charge	115nC
Family	Transistors - IGBTs - Single
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 20A
Input Type	Standard
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Test Condition	400V, 20A, 10 Ohm, 15V
Supplier Device Package	D2PAK
Current - Collector (Ic) (Max)	40A
Category	Discrete Semiconductor Products
Reverse Recovery Time (trr)	90ns
Voltage - Collector Emitter Breakdown (Max)	600V
Mounting Type	Surface Mount
Switching Energy	209µJ (on), 261µJ (off)
Packaging	Digi-Reel®

Datasheet： STGB20H60DF.pdf

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Stock code :	3650364
Mfg name :	STMicroelectronics
MPN :	STGB20H60DF
Product description :	STMicroelectronics STGB20H60DF, N沟道 IGBT 晶体管, 40 A, Vce=600 V, 3针 D2PAK封装

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