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| 产品描述：
Single N-Channel 75 V 5.8 mOhm 110 nC HEXFET® Power Mosfet - TO-220-3
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| 标准包装：1 | ||
| 数据手册： |
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| FET Feature | Standard |
|---|---|
| Package / Case | TO-220-3 |
| Power - Max | 230W |
| Supplier Device Package | TO-220AB |
| Gate Charge (Qg) @ Vgs | 110nC @ 10V |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Online Catalog | N-Channel Standard FETs |
| Family | FETs - Single |
| Vgs(th) (Max) @ Id | 4V @ 150µA |
| Packaging | Tube |
| Rds On (Max) @ Id, Vgs | 5.8 mOhm @ 75A, 10V |
| PCN Assembly/Origin | Mosfet Backend Wafer Processing 23/Oct/2013 Qualification Wafer Source 01/Apr/2014 |
| Drain to Source Voltage (Vdss) | 75V |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Product Training Modules | High Voltage Integrated Circuits (HVIC Gate Drivers) |
| Design Resources | IRFB3307ZPBF Saber Model IRFB3307ZPBF Spice Model |
| Series | HEXFET® |
| Mounting Type | Through Hole |
| Input Capacitance (Ciss) @ Vds | 4750pF @ 50V |
| RoHS | Lead free / RoHS Compliant |
| 数据手册： |
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