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| 产品描述：
Transistor, N-MOSFET, unipolar, 60V, 270A, 375W, D2PAK
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| 标准包装：1 | ||
| 数据手册： |
- 规格参数
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| FET Feature | Logic Level Gate |
|---|---|
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Power - Max | 375W |
| Supplier Device Package | D2PAK |
| Gate Charge (Qg) @ Vgs | 300nC @ 10V |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Series | HEXFET® |
| Family | FETs - Single |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Packaging | Tube |
| Rds On (Max) @ Id, Vgs | 2.5 mOhm @ 170A, 10V |
| PCN Assembly/Origin | Mosfet Backend Wafer Processing 23/Oct/2013 Additional Wafer Source 11/Nov/2014 |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 195A (Tc) |
| Product Training Modules | High Voltage Integrated Circuits (HVIC Gate Drivers) |
| Online Catalog | N-Channel Logic Level Gate FETs |
| PCN Other | Multiple Changes 06/Oct/2014 |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 8970pF @ 50V |
| RoHS | Lead free / RoHS Compliant |
| 数据手册： |
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