IRFS3006PBF specifications -Ameya360 electronic components purchase network


IRFS3006PBF

ACTIVE D2PAK
Product description : Transistor, N-MOSFET, unipolar, 60V, 270A, 375W, D2PAK
SPQ：1
Datasheet : IRFS3006PBF.pdf

FET Feature	Logic Level Gate
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power - Max	375W
Supplier Device Package	D2PAK
Gate Charge (Qg) @ Vgs	300nC @ 10V
FET Type	MOSFET N-Channel, Metal Oxide
Series	HEXFET®
Family	FETs - Single
Vgs(th) (Max) @ Id	4V @ 250µA
Packaging	Tube
Rds On (Max) @ Id, Vgs	2.5 mOhm @ 170A, 10V
PCN Assembly/Origin	Mosfet Backend Wafer Processing 23/Oct/2013 Additional Wafer Source 11/Nov/2014
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	195A (Tc)
Product Training Modules	High Voltage Integrated Circuits (HVIC Gate Drivers)
Online Catalog	N-Channel Logic Level Gate FETs
PCN Other	Multiple Changes 06/Oct/2014
Mounting Type	Surface Mount
Input Capacitance (Ciss) @ Vds	8970pF @ 50V
RoHS	Lead free / RoHS Compliant

Datasheet： IRFS3006PBF.pdf

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Stock code :	3579
Mfg name :	Infineon Technologies
MPN :	IRFS3006PBF
Product description :	Transistor, N-MOSFET, unipolar, 60V, 270A, 375W, D2PAK

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