SI2329DS-T1-GE3 specifications -Ameya360 electronic components purchase network


SI2329DS-T1-GE3

ACTIVE SOT-23-3 (TO-236) EAR99
Product description : Si2329DS Series 8 V 5.3 A 0.03 Ohm SMT P-Channel MOSFET - SOT-23-3
SPQ：1
Datasheet : --

FET Feature	Logic Level Gate
Package / Case	TO-236-3, SC-59, SOT-23-3
Drain to Source Voltage (Vdss)	8V
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Gate Charge (Qg) @ Vgs	29nC @ 4.5V
FET Type	MOSFET P-Channel, Metal Oxide
Family	FETs - Single
Mounting Type	Surface Mount
ECCN	EAR99
Rds On (Max) @ Id, Vgs	30 mOhm @ 5.3A, 4.5V
Power - Max	2.5W
Supplier Device Package	SOT-23-3 (TO-236)
Standard Package	3,000
Packaging	Tape & Reel (TR)
Series	TrenchFET®
Vgs(th) (Max) @ Id	800mV @ 250µA
Input Capacitance (Ciss) @ Vds	1485pF @ 4V

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Stock code :	3579238
Mfg name :	Vishay
MPN :	SI2329DS-T1-GE3
Product description :	Si2329DS Series 8 V 5.3 A 0.03 Ohm SMT P-Channel MOSFET - SOT-23-3

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