| SI1025X-T1-E3 | ||
|---|---|---|
|
|
||
|
||
| Product description : Dual P-Channel 60 V 4 Ohm Surface Mount TrenchFET Power Mosfet - SC-89-6 | ||
| SPQ：3000 | ||
| Datasheet : -- |
- Specifications
- Product Attributes
- Documents
- Product reviews
| FET Feature | Logic Level Gate |
|---|---|
| Package / Case | SOT-563, SOT-666 |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 190mA |
| Gate Charge (Qg) @ Vgs | 1.7nC @ 15V |
| FET Type | 2 P-Channel (Dual) |
| Family | FETs - Arrays |
| Mounting Type | Surface Mount |
| ECCN | EAR99 |
| Rds On (Max) @ Id, Vgs | 4 Ohm @ 500mA, 10V |
| Power - Max | 250mW |
| Supplier Device Package | SC-89-6 |
| Standard Package | 1 |
| Packaging | Cut Tape (CT) |
| Series | TrenchFET® |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Input Capacitance (Ciss) @ Vds | 23pF @ 25V |
You can comment after logging in.
Please enter the verification code in the image below：